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Typical Performance Characteristics
10
Figure 1. On-Region Characteristics
V GS
Figure 2. Transfer Characteristics
2
10
1
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10
150 C
10
25 C
-55 C
0
1
o
o
o
* Notes :
* Notes :
10
10
10
10
2. T C = 25 C
10
-1
-1
0
1
1. 250 μ s Pulse Test
o
0
2
4
6
8
1. V DS = 40V
2. 250 μ s Pulse Test
10
12
V DS , Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.8
V GS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
0.6
V GS = 10V
1
150 C
25 C
* Note : T J = 25 C
0.4
0.2
V GS = 20V
o
o
o
* Notes :
1. V GS = 0V
2. 250 μ s Pulse Test
10
0.0
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
5000
C iss = C gs + C gd (C ds = shorted)
12
V SD , Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
4000
C oss
C iss
C oss = C ds + C gd
C rss = C gd
10
8
V DS = 130V
V DS = 325V
V DS = 520V
3000
6
2000
* Note ;
4
1000
C rss
1. V GS = 0 V
2. f = 1 MHz
2
* Note : I D = 15A
10
10
10
0
-1
0
1
0
0
10
20
30
40
50
V DS , Drain-Source Voltage [V]
Q G , Total Gate Charge [nC]
FDA15N65 Rev. A
3
www.fairchildsemi.com
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